2N4234 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N4234 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
1W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 250mA 1V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
600mV @ 125mA, 1A
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
3MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.223000
$2.223
10
$2.097170
$20.9717
100
$1.978462
$197.8462
500
$1.866474
$933.237
1000
$1.760824
$1760.824
2N4234 PBFREE Product Details
2N4234 PBFREE Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 250mA 1V.A VCE saturation (Max) of 600mV @ 125mA, 1A means Ic has reached its maximum value(saturated).A 40V maximal voltage - Collector Emitter Breakdown is present in the device.
2N4234 PBFREE Features
the DC current gain for this device is 30 @ 250mA 1V the vce saturation(Max) is 600mV @ 125mA, 1A
2N4234 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N4234 PBFREE applications of single BJT transistors.