2N5884 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N5884 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Operating Temperature
-65°C~200°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
200W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 10A 4V
Current - Collector Cutoff (Max)
2mA
Vce Saturation (Max) @ Ib, Ic
4V @ 6.25A, 25A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
25A
Frequency - Transition
4MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.586000
$6.586
10
$6.213208
$62.13208
100
$5.861517
$586.1517
500
$5.529733
$2764.8665
1000
$5.216729
$5216.729
2N5884 PBFREE Product Details
2N5884 PBFREE Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 10A 4V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 6.25A, 25A.The device has a 80V maximal voltage - Collector Emitter Breakdown.
2N5884 PBFREE Features
the DC current gain for this device is 20 @ 10A 4V the vce saturation(Max) is 4V @ 6.25A, 25A
2N5884 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N5884 PBFREE applications of single BJT transistors.