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2N5884 PBFREE

2N5884 PBFREE

2N5884 PBFREE

Central Semiconductor Corp

2N5884 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N5884 PBFREE Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Operating Temperature -65°C~200°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 200W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10A 4V
Current - Collector Cutoff (Max) 2mA
Vce Saturation (Max) @ Ib, Ic 4V @ 6.25A, 25A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 25A
Frequency - Transition 4MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.586000 $6.586
10 $6.213208 $62.13208
100 $5.861517 $586.1517
500 $5.529733 $2764.8665
1000 $5.216729 $5216.729
2N5884 PBFREE Product Details

2N5884 PBFREE Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 10A 4V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 6.25A, 25A.The device has a 80V maximal voltage - Collector Emitter Breakdown.

2N5884 PBFREE Features


the DC current gain for this device is 20 @ 10A 4V
the vce saturation(Max) is 4V @ 6.25A, 25A

2N5884 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N5884 PBFREE applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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