2N6055 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N6055 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
O-MBFM-P2
Number of Elements
1
Configuration
DARLINGTON
Power - Max
100W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 4A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
3V @ 80mA, 8A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
8A
Transition Frequency
4MHz
Frequency - Transition
4MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.66000
$6.66
500
$6.5934
$3296.7
1000
$6.5268
$6526.8
1500
$6.4602
$9690.3
2000
$6.3936
$12787.2
2500
$6.327
$15817.5
2N6055 PBFREE Product Details
2N6055 PBFREE Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 4A 3V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).4MHz is present in the transition frequency.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.
2N6055 PBFREE Features
the DC current gain for this device is 750 @ 4A 3V the vce saturation(Max) is 3V @ 80mA, 8A a transition frequency of 4MHz
2N6055 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N6055 PBFREE applications of single BJT transistors.