15C01M-TL-E Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.A collector emitter saturation voltage of 150mV allows maximum design flexibility.When VCE saturation is 300mV @ 10mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 15V volts.In extreme cases, the collector current can be as low as 700mA volts.

15C01M-TL-E Features

the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 200mA
the emitter base voltage is kept at 5V

15C01M-TL-E Applications

There are a lot of ON Semiconductor 15C01M-TL-E applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface