NSV1C301ET4G-VF01 Overview

This device has a DC current gain of 120 @ 1A 2V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 300mA, 3A.The part has a transition frequency of 120MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

NSV1C301ET4G-VF01 Features

the DC current gain for this device is 120 @ 1A 2V
the vce saturation(Max) is 250mV @ 300mA, 3A
a transition frequency of 120MHz

NSV1C301ET4G-VF01 Applications

There are a lot of ON Semiconductor NSV1C301ET4G-VF01 applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver