CET3906E TR PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CET3906E TR PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Surface Mount
YES
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Other Transistors
Configuration
Single
Power - Max
250mW
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
200mA
Transition Frequency
300MHz
Frequency - Transition
300MHz
Power Dissipation-Max (Abs)
0.43W
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.408000
$0.408
10
$0.384906
$3.84906
100
$0.363119
$36.3119
500
$0.342565
$171.2825
1000
$0.323174
$323.174
CET3906E TR PBFREE Product Details
CET3906E TR PBFREE Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.A 40V maximal voltage - Collector Emitter Breakdown is present in the device.
CET3906E TR PBFREE Features
the DC current gain for this device is 100 @ 10mA 1V the vce saturation(Max) is 200mV @ 5mA, 50mA a transition frequency of 300MHz
CET3906E TR PBFREE Applications
There are a lot of Central Semiconductor Corp CET3906E TR PBFREE applications of single BJT transistors.