2N5086BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2N5086BU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Additional Feature
LOW NOISE
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 100μA 5V
Current - Collector Cutoff (Max)
50nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
40MHz
Frequency - Transition
40MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.02000
$0.02
500
$0.0198
$9.9
1000
$0.0196
$19.6
1500
$0.0194
$29.1
2000
$0.0192
$38.4
2500
$0.019
$47.5
2N5086BU Product Details
2N5086BU Overview
This device has a DC current gain of 150 @ 100μA 5V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 1mA, 10mA.Parts of this part have transition frequencies of 40MHz.The device exhibits a collector-emitter breakdown at 50V.
2N5086BU Features
the DC current gain for this device is 150 @ 100μA 5V the vce saturation(Max) is 300mV @ 1mA, 10mA a transition frequency of 40MHz
2N5086BU Applications
There are a lot of Rochester Electronics, LLC 2N5086BU applications of single BJT transistors.