2N5771 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2N5771 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
350mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA 300mV
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
15V
Current - Collector (Ic) (Max)
200mA
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.00000
$3
500
$2.97
$1485
1000
$2.94
$2940
1500
$2.91
$4365
2000
$2.88
$5760
2500
$2.85
$7125
2N5771 Product Details
2N5771 Overview
This device has a DC current gain of 50 @ 10mA 300mV, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.A 15V maximal voltage - Collector Emitter Breakdown is present in the device.
2N5771 Features
the DC current gain for this device is 50 @ 10mA 300mV the vce saturation(Max) is 600mV @ 5mA, 50mA the supplier device package of TO-92-3
2N5771 Applications
There are a lot of Rochester Electronics, LLC 2N5771 applications of single BJT transistors.