CP736V-2N5401-CT20 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CP736V-2N5401-CT20 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-65°C~150°C TJ
Packaging
Tray
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
150V
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
600mA
Frequency - Transition
300MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$149.594183
$149.594183
10
$141.126587
$1411.26587
100
$133.138290
$13313.829
500
$125.602160
$62801.08
1000
$118.492604
$118492.604
CP736V-2N5401-CT20 Product Details
CP736V-2N5401-CT20 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 50mA.Product comes in Die supplier package.Single BJT transistor shows a 150V maximal voltage - Collector EmSingle BJT transistorter Breakdown.A maximum collector current of 600mA volts is possible.
CP736V-2N5401-CT20 Features
the DC current gain for this device is 60 @ 10mA 5V the vce saturation(Max) is 500mV @ 5mA, 50mA the supplier device package of Die
CP736V-2N5401-CT20 Applications
There are a lot of Central Semiconductor Corp CP736V-2N5401-CT20 applications of single BJT transistors.