CP788X-2N5087-CT20 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CP788X-2N5087-CT20 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-65°C~150°C TJ
Packaging
Tray
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100μA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
50V
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
50mA
Frequency - Transition
40MHz
RoHS Status
ROHS3 Compliant
CP788X-2N5087-CT20 Product Details
CP788X-2N5087-CT20 Overview
In this device, the DC current gain is 250 @ 100μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 300mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).Product comes in Die supplier package.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.
CP788X-2N5087-CT20 Features
the DC current gain for this device is 250 @ 100μA 5V the vce saturation(Max) is 300mV @ 1mA, 10mA the supplier device package of Die
CP788X-2N5087-CT20 Applications
There are a lot of Central Semiconductor Corp CP788X-2N5087-CT20 applications of single BJT transistors.