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CP788X-2N5087-CT20

CP788X-2N5087-CT20

CP788X-2N5087-CT20

Central Semiconductor Corp

CP788X-2N5087-CT20 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

CP788X-2N5087-CT20 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature-65°C~150°C TJ
PackagingTray
Published 2013
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100μA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 50mA
Frequency - Transition 40MHz
RoHS StatusROHS3 Compliant
In-Stock:2160 items

CP788X-2N5087-CT20 Product Details

CP788X-2N5087-CT20 Overview


In this device, the DC current gain is 250 @ 100μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 300mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).Product comes in Die supplier package.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.

CP788X-2N5087-CT20 Features


the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the supplier device package of Die

CP788X-2N5087-CT20 Applications


There are a lot of Central Semiconductor Corp CP788X-2N5087-CT20 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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