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SMBT 3906 B5003

SMBT 3906 B5003

SMBT 3906 B5003

Infineon Technologies

SMBT 3906 B5003 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

SMBT 3906 B5003 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2008
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number MBT3906
Power - Max 330mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 200mA
Frequency - Transition 250MHz
In-Stock:1791 items

SMBT 3906 B5003 Product Details

SMBT 3906 B5003 Overview


This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.

SMBT 3906 B5003 Features


the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA

SMBT 3906 B5003 Applications


There are a lot of Infineon Technologies SMBT 3906 B5003 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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