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FJA13009TU

FJA13009TU

FJA13009TU

ON Semiconductor

FJA13009TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJA13009TU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 400V
Max Power Dissipation130W
Current Rating12A
Frequency 4MHz
Number of Elements 1
Element ConfigurationSingle
Power Dissipation130W
Transistor Application SWITCHING
Gain Bandwidth Product4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 12A
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5A 5V
Vce Saturation (Max) @ Ib, Ic 3V @ 3A, 12A
Collector Emitter Breakdown Voltage400V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage1V
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
hFE Min 6
Height 20.1mm
Length 15.8mm
Width 5mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3588 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.89000$1.89
10$1.70200$17.02
450$1.29780$584.01
900$1.14223$1028.007

FJA13009TU Product Details

FJA13009TU Overview


In this device, the DC current gain is 8 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 3A, 12A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 12A current rating.In the part, the transition frequency is 4MHz.Maximum collector currents can be below 12A volts.

FJA13009TU Features


the DC current gain for this device is 8 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz

FJA13009TU Applications


There are a lot of ON Semiconductor FJA13009TU applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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