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2SJ651

2SJ651

2SJ651

ON SEMICONDUCTOR

SOT-23

2SJ651 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time [object Object]
Surface Mount NO
Number of Terminals 3
Transistor Element Material SILICON
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
HTS Code 8541.29.00.95
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Transistor Application SWITCHING
Polarity/Channel Type P-CHANNEL
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.092Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 175 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.21000 $1.21
500 $1.1979 $598.95
1000 $1.1858 $1185.8
1500 $1.1737 $1760.55
2000 $1.1616 $2323.2
2500 $1.1495 $2873.75
2SJ651 Product Details

2SJ651 Description


2SJ651 is a -60v P-Channel Silicon MOSFET. Due to the following features, the onsemi 2SJ651 can be applied in DC / DC Converter Applications. The operating junction and storage temperature are between -55 and 150??. The MOSFET 2SJ651 is in the TO-220M package with 25W power dissipation. 



2SJ651 Features


  • Low ON-resistance

  • Ultrahigh-speed switching

  • 4V drive

  • Avalanche resistance guarantee



2SJ651 Applications


  • Cellular phones 

  • Laptop computers

  • Photovoltaic systems 

  • Wind turbines

  • Shunt voltage regulator and the series voltage regulator


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