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2SJ651

2SJ651

2SJ651

ON SEMICONDUCTOR

SOT-23

2SJ651 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time [object Object]
Surface MountNO
Number of Terminals 3
Transistor Element Material SILICON
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
HTS Code8541.29.00.95
Terminal Position SINGLE
Terminal FormTHROUGH-HOLE
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating ModeENHANCEMENT MODE
Case Connection ISOLATED
Transistor Application SWITCHING
Polarity/Channel Type P-CHANNEL
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.092Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 175 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS StatusRoHS Compliant
In-Stock:6986 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.21000$1.21
500$1.1979$598.95
1000$1.1858$1185.8
1500$1.1737$1760.55
2000$1.1616$2323.2
2500$1.1495$2873.75

2SJ651 Product Details

2SJ651 Description


2SJ651 is a -60v P-Channel Silicon MOSFET. Due to the following features, the onsemi 2SJ651 can be applied in DC / DC Converter Applications. The operating junction and storage temperature are between -55 and 150??. The MOSFET 2SJ651 is in the TO-220M package with 25W power dissipation.



2SJ651 Features


  • Low ON-resistance

  • Ultrahigh-speed switching

  • 4V drive

  • Avalanche resistance guarantee



2SJ651 Applications


  • Cellular phones

  • Laptop computers

  • Photovoltaic systems

  • Wind turbines

  • Shunt voltage regulator and the series voltage regulator


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