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NTK3139PT1G

NTK3139PT1G

NTK3139PT1G

ON Semiconductor

NTK3139PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTK3139PT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case SOT-723
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 380mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Power Dissipation-Max 310mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation310mW
Turn On Delay Time9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 480m Ω @ 780mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 170pF @ 16V
Current - Continuous Drain (Id) @ 25°C 660mA Ta
Rise Time5.8ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 5.8 ns
Turn-Off Delay Time 32.7 ns
Continuous Drain Current (ID) 780mA
Threshold Voltage -1.2V
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 0.78A
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage -20V
Height 550μm
Length 1.25mm
Width 850μm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:16302 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.52000$0.52
500$0.5148$257.4
1000$0.5096$509.6
1500$0.5044$756.6
2000$0.4992$998.4
2500$0.494$1235

NTK3139PT1G Product Details

NTK3139PT1G Description


NTK3139PT1G is a P-Channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 20V. The operating temperature of NTK3139PT1G is -55°C~150°C TJ and its maximum power dissipation are 310mW. NTK3139PT1G has 3 pins and it is available in Tape & Reel (TR) packaging way. The Turn-On Delay Time of NTK3139PT1G is 9 ns and the Turn-Off Delay Time is 32.7 ns.



NTK3139PT1G Features


  • P?channel Switch with Low RDS(on)

  • 44% Smaller Footprint and 38% Thinner than SC?89

  • Low Threshold Levels Allowing 1.5 V RDS(on) Rating

  • Operated at Low Logic Level Gate Drive

  • These Devices are Pb?Free, Halogen Free/BFR Free, and are RoHS Compliant



NTK3139PT1G Applications


  • Load/Power Switching

  • Interfacing, Logic Switching

  • Battery Management for Ultra Small Portable Electronics


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