NTK3139PT1G

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Manufacturer part number:NTK3139PT1G

Manufacturer:ON Semiconductor

Description:NTK3139PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTK3139PT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	7 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SOT-723
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	380mOhm
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Power Dissipation-Max	310mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	310mW
Turn On Delay Time	9 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	480m Ω @ 780mA, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	170pF @ 16V
Current - Continuous Drain (Id) @ 25°C	660mA Ta
Rise Time	5.8ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±6V
Fall Time (Typ)	5.8 ns
Turn-Off Delay Time	32.7 ns
Continuous Drain Current (ID)	780mA
Threshold Voltage	-1.2V
Gate to Source Voltage (Vgs)	6V
Drain Current-Max (Abs) (ID)	0.78A
Drain to Source Breakdown Voltage	-20V
Dual Supply Voltage	-20V
Height	550μm
Length	1.25mm
Width	850μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free