2SK4096LS

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Manufacturer part number:2SK4096LS

Manufacturer:ON SEMICONDUCTOR

Description:

Case Package:SOT-23

Datasheet:2SK4096LS Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	[object Object]
Surface Mount	NO
Number of Terminals	3
Transistor Element Material	SILICON
Terminal Finish	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Additional Feature	HIGH RELIABILITY
HTS Code	8541.29.00.95
Terminal Position	SINGLE
Terminal Form	THROUGH-HOLE
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Transistor Application	SWITCHING
Polarity/Channel Type	N-CHANNEL
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	8A
Drain-source On Resistance-Max	0.85Ohm
Pulsed Drain Current-Max (IDM)	32A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	397 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$1.36000	$1.36
500	$1.3464	$673.2
1000	$1.3328	$1332.8
1500	$1.3192	$1978.8
2000	$1.3056	$2611.2
2500	$1.292	$3230

2SK4096LS Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 397 mJ (Eas).Drain current refers to the maximum continuous current a device can conduct, and it is 8A.Peak drain current is 32A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 500V.