FDP075N15A-F102

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FDP075N15A-F102

Manufacturer part number:FDP075N15A-F102

Manufacturer:ON Semiconductor

Description:FDP075N15A-F102 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDP075N15A-F102 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	PowerTrench®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Resistance	6.25MOhm
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	333W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	333W
Turn On Delay Time	28 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7350pF @ 75V
Current - Continuous Drain (Id) @ 25°C	130A Tc
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Rise Time	37ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	62 ns
Continuous Drain Current (ID)	130A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	150V
Pulsed Drain Current-Max (IDM)	522A
Avalanche Energy Rating (Eas)	588 mJ
Max Junction Temperature (Tj)	175°C
Height	19.85mm
Length	10.36mm
Width	4.672mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free