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C2M1000170D

C2M1000170D

C2M1000170D

Cree/Wolfspeed

SiCFET (Silicon Carbide) N-Channel Tube 1.1Ohm @ 2A, 20V +25V, -10V 191pF @ 1000V 13nC @ 20V 1700V TO-247-3

SOT-23

C2M1000170D Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series Z-FET™
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology SiCFET (Silicon Carbide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 69W Tc
Element Configuration Single
Power Dissipation 69W
Turn On Delay Time 9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.1Ohm @ 2A, 20V
Vgs(th) (Max) @ Id 2.4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 191pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 4.9A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 20V
Rise Time 46ns
Drain to Source Voltage (Vdss) 1700V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 15 ns
Evaluation Kit Yes
Continuous Drain Current (ID) 4.9A
Threshold Voltage 2.4V
Gate to Source Voltage (Vgs) 25V
Input Capacitance 191pF
Drain to Source Resistance 950mOhm
Rds On Max 1.1 Ω
Nominal Vgs 2.4 V
Height 21.1mm
Length 16.13mm
Width 5.21mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.545155 $3.545155
10 $3.344486 $33.44486
100 $3.155176 $315.5176
500 $2.976581 $1488.2905
1000 $2.808095 $2808.095
C2M1000170D Product Details

C2M1000170D Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 191pF @ 1000V.This device has a continuous drain current (ID) of [4.9A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 15 ns.MOSFETs have 950mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2.4V.In order to operate this transistor, a voltage of 1700V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (20V).

C2M1000170D Features


a continuous drain current (ID) of 4.9A
the turn-off delay time is 15 ns
single MOSFETs transistor is 950mOhm
a threshold voltage of 2.4V
a 1700V drain to source voltage (Vdss)


C2M1000170D Applications


There are a lot of Cree/Wolfspeed
C2M1000170D applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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