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C2M1000170J

C2M1000170J

C2M1000170J

Cree/Wolfspeed

SiCFET (Silicon Carbide) N-Channel Bulk 1.4Ohm @ 2A, 20V +25V, -10V 200pF @ 1000V 13nC @ 20V 1700V TO-263-7 (Straight Leads)

SOT-23

C2M1000170J Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-263-7 (Straight Leads)
Number of Pins 7
Supplier Device Package D2PAK (7-Lead)
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Series C2M™
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 78W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 20V
Vgs(th) (Max) @ Id 3.1V @ 500μA (Typ)
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 5.3A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 20V
Drain to Source Voltage (Vdss) 1700V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
Continuous Drain Current (ID) 5.3A
Threshold Voltage 2.6V
Drain to Source Resistance 1Ohm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.674653 $8.674653
10 $8.183635 $81.83635
100 $7.720411 $772.0411
500 $7.283407 $3641.7035
1000 $6.871138 $6871.138
C2M1000170J Product Details

C2M1000170J Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 200pF @ 1000V.This device conducts a continuous drain current (ID) of 5.3A, which is the maximum continuous current transistor can conduct.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 1Ohm, which means the device is not biased.Activation of any electrical operation happens at threshold voltage, and this transistor has 2.6V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 1700V.In order to reduce power consumption, this device uses a drive voltage of 20V volts (20V).

C2M1000170J Features


a continuous drain current (ID) of 5.3A
single MOSFETs transistor is 1Ohm
a threshold voltage of 2.6V
a 1700V drain to source voltage (Vdss)


C2M1000170J Applications


There are a lot of Cree/Wolfspeed
C2M1000170J applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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