TP65H300G4LSG

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Manufacturer part number:TP65H300G4LSG

Manufacturer:Transphorm

Description:GaNFET (Gallium Nitride) N-Channel 312m Ω @ 5A, 8V ±18V 760pF @ 400V 9.6nC @ 8V 650V 3-PowerDFN

Case Package:SOT-23

Datasheet:TP65H300G4LSG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	3-PowerDFN
Operating Temperature	-55°C~150°C TJ
Part Status	Active
Technology	GaNFET (Gallium Nitride)
Power Dissipation-Max	21W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	312m Ω @ 5A, 8V
Vgs(th) (Max) @ Id	2.6V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds	760pF @ 400V
Current - Continuous Drain (Id) @ 25°C	6.5A Tc
Gate Charge (Qg) (Max) @ Vgs	9.6nC @ 8V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	8V
Vgs (Max)	±18V

Quantity	Unit Price	Ext. Price
1	$4.02000	$4.02
500	$3.9798	$1989.9
1000	$3.9396	$3939.6
1500	$3.8994	$5849.1
2000	$3.8592	$7718.4
2500	$3.819	$9547.5

TP65H300G4LSG Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 760pF @ 400V.In order to operate this transistor, a voltage of 650V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (8V).