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C3M0120090D

C3M0120090D

C3M0120090D

Cree/Wolfspeed

900V, 120 MOHM, G3 SIC MOSFET

SOT-23

C3M0120090D Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series C3M™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 97W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 155mOhm @ 15A, 15V
Vgs(th) (Max) @ Id 3.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 600V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Gate Charge (Qg) (Max) @ Vgs 17.3nC @ 15V
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 15V
Vgs (Max) +18V, -8V
Continuous Drain Current (ID) 23A
Threshold Voltage 2.1V
Drain to Source Resistance 120mOhm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.75000 $6.75

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