IXFN170N10

new-10%

Manufacturer part number:IXFN170N10

Manufacturer:IXYS

Description:MOSFET N-CH 100V 170A SOT-227B

Case Package:SOT-23

Datasheet:IXFN170N10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	10mOhm
Terminal Finish	Nickel (Ni)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PUFM-X4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	600W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	600W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	10300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	170A Tc
Gate Charge (Qg) (Max) @ Vgs	515nC @ 10V
Rise Time	90ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	79 ns
Turn-Off Delay Time	158 ns
Continuous Drain Current (ID)	170A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	680A
Dual Supply Voltage	100V
Nominal Vgs	4 V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant