STD6N95K5

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STD6N95K5

Manufacturer part number:STD6N95K5

Manufacturer:STMicroelectronics

Description:STD6N95K5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STD6N95K5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Series	SuperMESH5™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	1.25Ohm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STD6N
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	90W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	90W
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.25 Ω @ 3A, 10V
Vgs(th) (Max) @ Id	5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	450pF @ 100V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	9A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	950V
Avalanche Energy Rating (Eas)	90 mJ
Nominal Vgs	4 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free