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BC 808-40W H6327

  • BC 808-40W H6327
  • BC 808-40W H6327

BC 808-40W H6327

BC 808-40W H6327

Infineon Technologies

BC 808-40W H6327 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC 808-40W H6327 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code compliant
Base Part Number BC808
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Power - Max 250mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 200MHz
Frequency - Transition 200MHz
BC 808-40W H6327 Product Details

BC 808-40W H6327 Overview


DC current gain in this device equals 250 @ 100mA 1V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A transition frequency of 200MHz is present in the part.A 25V maximal voltage - Collector Emitter Breakdown is present in the device.

BC 808-40W H6327 Features


the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 200MHz

BC 808-40W H6327 Applications


There are a lot of Infineon Technologies BC 808-40W H6327 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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