2DB1694-7 Overview
DC current gain in this device equals 270 @ 100mA 2V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of -380mV, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -6V allows for a high level of efficiency.As a result, the part has a transition frequency of 300MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.A maximum collector current of 1A volts can be achieved.
2DB1694-7 Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -380mV
the vce saturation(Max) is 380mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 300MHz
2DB1694-7 Applications
There are a lot of Diodes Incorporated 2DB1694-7 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
