2DB1694-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
2DB1694-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
300MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2DB1694
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Power - Max
300mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
380mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
-380mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
-6V
hFE Min
270
Height
1mm
Length
2.15mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.096483
$0.096483
500
$0.070943
$35.4715
1000
$0.059119
$59.119
2000
$0.054238
$108.476
5000
$0.050689
$253.445
10000
$0.047153
$471.53
15000
$0.045603
$684.045
50000
$0.044840
$2242
2DB1694-7 Product Details
2DB1694-7 Overview
DC current gain in this device equals 270 @ 100mA 2V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of -380mV, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -6V allows for a high level of efficiency.As a result, the part has a transition frequency of 300MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.A maximum collector current of 1A volts can be achieved.
2DB1694-7 Features
the DC current gain for this device is 270 @ 100mA 2V a collector emitter saturation voltage of -380mV the vce saturation(Max) is 380mV @ 25mA, 500mA the emitter base voltage is kept at -6V a transition frequency of 300MHz
2DB1694-7 Applications
There are a lot of Diodes Incorporated 2DB1694-7 applications of single BJT transistors.