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KSD1408OTU

KSD1408OTU

KSD1408OTU

Rochester Electronics, LLC

KSD1408OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

KSD1408OTU Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Case Connection ISOLATED
Power - Max 25W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 5V
Current - Collector Cutoff (Max) 30μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 4A
Transition Frequency 8MHz
Frequency - Transition 8MHz
RoHS Status ROHS3 Compliant
KSD1408OTU Product Details

KSD1408OTU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 500mA 5V.A VCE saturation (Max) of 1.5V @ 300mA, 3A means Ic has reached its maximum value(saturated).A transition frequency of 8MHz is present in the part.The device has a 80V maximal voltage - Collector Emitter Breakdown.

KSD1408OTU Features


the DC current gain for this device is 70 @ 500mA 5V
the vce saturation(Max) is 1.5V @ 300mA, 3A
a transition frequency of 8MHz

KSD1408OTU Applications


There are a lot of Rochester Electronics, LLC KSD1408OTU applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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