KSD1408OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSD1408OTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Case Connection
ISOLATED
Power - Max
25W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 500mA 5V
Current - Collector Cutoff (Max)
30μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
4A
Transition Frequency
8MHz
Frequency - Transition
8MHz
RoHS Status
ROHS3 Compliant
KSD1408OTU Product Details
KSD1408OTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 500mA 5V.A VCE saturation (Max) of 1.5V @ 300mA, 3A means Ic has reached its maximum value(saturated).A transition frequency of 8MHz is present in the part.The device has a 80V maximal voltage - Collector Emitter Breakdown.
KSD1408OTU Features
the DC current gain for this device is 70 @ 500mA 5V the vce saturation(Max) is 1.5V @ 300mA, 3A a transition frequency of 8MHz
KSD1408OTU Applications
There are a lot of Rochester Electronics, LLC KSD1408OTU applications of single BJT transistors.