BC489G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC489G Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 4 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC489
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
300mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
15
RoHS Status
RoHS Compliant
Lead Free
Lead Free
BC489G Product Details
BC489G Overview
DC current gain in this device equals 60 @ 100mA 2V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 200MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
BC489G Features
the DC current gain for this device is 60 @ 100mA 2V a collector emitter saturation voltage of 300mV the vce saturation(Max) is 300mV @ 100mA, 1A the emitter base voltage is kept at 5V the current rating of this device is 500mA a transition frequency of 200MHz
BC489G Applications
There are a lot of ON Semiconductor BC489G applications of single BJT transistors.