2DB1697-13 Overview

DC current gain in this device equals 270 @ 200mA 2V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -65mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In order to achieve high efficiency, the continuous collector voltage should be kept at -2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.A transition frequency of 140MHz is present in the part.Single BJT transistor can be broken down at a voltage of 12V volts.Maximum collector currents can be below 2A volts.

2DB1697-13 Features

the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -65mV
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 140MHz

2DB1697-13 Applications

There are a lot of Diodes Incorporated 2DB1697-13 applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter