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BC857CW-G

BC857CW-G

BC857CW-G

Comchip Technology

BC857CW-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available on our website

SOT-23

BC857CW-G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish TIN
Subcategory Other Transistors
Max Power Dissipation150mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Configuration Single
Power - Max 150mW
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage45V
Transition Frequency 100MHz
Frequency - Transition 100MHz
RoHS StatusROHS3 Compliant
In-Stock:218446 items

Pricing & Ordering

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BC857CW-G Product Details

BC857CW-G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.100MHz is present in the transition frequency.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

BC857CW-G Features


the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz

BC857CW-G Applications


There are a lot of Comchip Technology BC857CW-G applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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