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MPSW56RLRAG

MPSW56RLRAG

MPSW56RLRAG

ON Semiconductor

MPSW56RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPSW56RLRAG Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation 1W
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MPSW56
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Transistor Application AMPLIFIER
Gain Bandwidth Product 50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 250mA 1V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 250mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 4V
hFE Min 100
Height 7.87mm
Length 5.21mm
Width 4.19mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.150283 $6.150283
10 $5.802154 $58.02154
100 $5.473730 $547.373
500 $5.163897 $2581.9485
1000 $4.871601 $4871.601
MPSW56RLRAG Product Details

MPSW56RLRAG Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 250mA 1V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 250mA.Keeping the emitter base voltage at 4V allows for a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In this part, there is a transition frequency of 50MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.A maximum collector current of 500mA volts can be achieved.

MPSW56RLRAG Features


the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz

MPSW56RLRAG Applications


There are a lot of ON Semiconductor MPSW56RLRAG applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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