MPSW56RLRAG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 250mA 1V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 250mA.Keeping the emitter base voltage at 4V allows for a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In this part, there is a transition frequency of 50MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.A maximum collector current of 500mA volts can be achieved.
MPSW56RLRAG Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSW56RLRAG Applications
There are a lot of ON Semiconductor MPSW56RLRAG applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
