2DB1714-13 Overview
This device has a DC current gain of 270 @ 200mA 2V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -370mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 370mV @ 75mA, 1.5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.In this part, there is a transition frequency of 200MHz.Single BJT transistor can be broken down at a voltage of 30V volts.Maximum collector currents can be below 2A volts.
2DB1714-13 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -370mV
the vce saturation(Max) is 370mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
2DB1714-13 Applications
There are a lot of Diodes Incorporated 2DB1714-13 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
