MMBT2369 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 10mA 1V.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 1mA, 10mA.An emitter's base voltage can be kept at 4.5V to gain high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 500MHz.An input voltage of 15V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 200mA volts.
MMBT2369 Features
the DC current gain for this device is 40 @ 10mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
a transition frequency of 500MHz
MMBT2369 Applications
There are a lot of ON Semiconductor MMBT2369 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
