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DCX53-16-13

DCX53-16-13

DCX53-16-13

Diodes Incorporated

DCX53-16-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DCX53-16-13 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DCX53
Pin Count4
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage80V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage-1V
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) -5V
Height 1.5mm
Length 4.5mm
Width 2.48mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:2534 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$10.244560$10.24456
10$9.664679$96.64679
100$9.117622$911.7622
500$8.601530$4300.765
1000$8.114651$8114.651

DCX53-16-13 Product Details

DCX53-16-13 Overview


This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -1V allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at -5V for high efficiency.In this part, there is a transition frequency of 200MHz.Breakdown input voltage is 80V volts.When collector current reaches its maximum, it can reach 1A volts.

DCX53-16-13 Features


the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz

DCX53-16-13 Applications


There are a lot of Diodes Incorporated DCX53-16-13 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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