2N7002-7-F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website
SOT-23
2N7002-7-F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
7.5Ohm
Additional Feature
HIGH RELIABILITY, LOW THRESHOLD
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
115mA
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Number of Channels
1
Voltage
60V
Power Dissipation-Max
370mW Ta
Element Configuration
Single
Current
115A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300mW
Turn On Delay Time
7 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
7.5 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
Current - Continuous Drain (Id) @ 25°C
115mA Ta
Rise Time
3ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
5.6 ns
Turn-Off Delay Time
11 ns
Continuous Drain Current (ID)
115mA
Threshold Voltage
2.5V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
70V
Dual Supply Voltage
60V
Nominal Vgs
2.5 V
Feedback Cap-Max (Crss)
5 pF
Height
1mm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.03846
$0.11538
6,000
$0.03494
$0.20964
15,000
$0.03072
$0.4608
30,000
$0.02790
$0.837
75,000
$0.02509
$1.88175
150,000
$0.02129
$3.1935
2N7002-7-F Product Details
2N7002-7-F Overview
A device's maximal input capacitance is 50pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 115mA, which represents the maximum continuous current it can conduct.Drain-source breakdown voltage is?the VDS at which a specified value of ID flows, with VGS=70V.?And this device has 70V drain to source breakdown voltage.Turn-Off delay time?is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 11 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.2.5V is the threshold voltage at which an electrical device activates any of its operations.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
2N7002-7-F Features
a continuous drain current (ID) of 115mA a drain-to-source breakdown voltage of 70V voltage the turn-off delay time is 11 ns a threshold voltage of 2.5V
2N7002-7-F Applications
There are a lot of Diodes Incorporated 2N7002-7-F applications of single MOSFETs transistors.
LCD/LED TV
DC/DC converters
Solar Inverter
PFC stages, hard switching PWM stages and resonant switching