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2N7002-7-F

2N7002-7-F

2N7002-7-F

Diodes Incorporated

2N7002-7-F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website

SOT-23

2N7002-7-F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 7.5Ohm
Additional Feature HIGH RELIABILITY, LOW THRESHOLD
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 115mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Voltage 60V
Power Dissipation-Max 370mW Ta
Element Configuration Single
Current 115A
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 115mA Ta
Rise Time 3ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.6 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 115mA
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 70V
Dual Supply Voltage 60V
Nominal Vgs 2.5 V
Feedback Cap-Max (Crss) 5 pF
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.03846 $0.11538
6,000 $0.03494 $0.20964
15,000 $0.03072 $0.4608
30,000 $0.02790 $0.837
75,000 $0.02509 $1.88175
150,000 $0.02129 $3.1935
2N7002-7-F Product Details

2N7002-7-F Overview


A device's maximal input capacitance is 50pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 115mA, which represents the maximum continuous current it can conduct.Drain-source breakdown voltage is?the VDS at which a specified value of ID flows, with VGS=70V.?And this device has 70V drain to source breakdown voltage.Turn-Off delay time?is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 11 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.2.5V is the threshold voltage at which an electrical device activates any of its operations.In addition to reducing power consumption, this device uses drive voltage (5V 10V).

2N7002-7-F Features


a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 11 ns
a threshold voltage of 2.5V

2N7002-7-F Applications


There are a lot of Diodes Incorporated 2N7002-7-F applications of single MOSFETs transistors.

  • LCD/LED TV
  • DC/DC converters
  • Solar Inverter
  • PFC stages, hard switching PWM stages and resonant switching
  • Motor drives and Uninterruptible Power Supplies
  • Uninterruptible Power Supply
  • Micro Solar Inverter
  • Synchronous Rectification
  • Telecom 1 Sever Power Supplies
  • Motor Drives and Uninterruptible Power Supples

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