STW12N150K5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STW12N150K5 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
MDmesh™ K5
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STW12N
Power Dissipation-Max
250W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.9 Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id
5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
1360pF @ 100V
Current - Continuous Drain (Id) @ 25°C
7A Tc
Gate Charge (Qg) (Max) @ Vgs
47nC @ 10V
Drain to Source Voltage (Vdss)
1500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Continuous Drain Current (ID)
7A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$9.63000
$9.63
30
$7.89267
$236.7801
120
$7.12250
$854.7
510
$5.96751
$3043.4301
1,020
$5.19750
$5.1975
STW12N150K5 Product Details
STW12N150K5 Description
Using proprietary MDmeshTM K5 technology and a cutting-edge vertical structure, the STW12N150K5 is an extremely high voltage N-channel Power MOSFET. For applications needing a high level of efficiency and greater power density, the outcome is a significantly reduced on-resistance and ultra-low gate charge.