2N7002DWQ-7-F

new-10%

Manufacturer part number:2N7002DWQ-7-F

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 60V 0.23A SOT363

Case Package:SOT-23

Datasheet:2N7002DWQ-7-F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Max Power Dissipation	310mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Reference Standard	AEC-Q101
JESD-30 Code	R-PDSO-G6
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	310mW
Turn On Delay Time	7 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.5 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Drain to Source Voltage (Vdss)	60V
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	230mA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	70V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Standard
Feedback Cap-Max (Crss)	5 pF
Height	1.1mm
RoHS Status	ROHS3 Compliant