BSC0911NDATMA1

new-10%

Manufacturer part number:BSC0911NDATMA1

Manufacturer:Infineon Technologies

Description:MOSFET LV POWER MOS

Case Package:SOT-23

Datasheet:BSC0911NDATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2013
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Max Power Dissipation	1W
JESD-30 Code	R-PDSO-N6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN SOURCE
FET Type	2 N-Channel (Dual) Asymmetrical
Rds On (Max) @ Id, Vgs	3.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 12V
Current - Continuous Drain (Id) @ 25°C	18A 30A
Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
Rise Time	5.4ns
Fall Time (Typ)	4 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	25V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate, 4.5V Drive
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free