PMCPB5530X,115

new-10%

Manufacturer part number:PMCPB5530X,115

Manufacturer:Nexperia USA Inc.

Description:MOSFET N/P-CH 20V 6HUSON

Case Package:SOT-23

Datasheet:PMCPB5530X,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Finish	Tin (Sn)
Max Power Dissipation	490mW
Pin Count	6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	4 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	34m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	660pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4A Ta 3.4A Ta
Gate Charge (Qg) (Max) @ Vgs	21.7nC @ 4.5V
Rise Time	15ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	16 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	3.4A
Gate to Source Voltage (Vgs)	-650mV
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	0.034Ohm
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free