APT13003DU-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
APT13003DU-G1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2016
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Max Power Dissipation
20W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
4MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
5 @ 1A 2V
Vce Saturation (Max) @ Ib, Ic
400mV @ 250mA, 1A
Collector Emitter Breakdown Voltage
450V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
300mV
Emitter Base Voltage (VEBO)
9V
Continuous Collector Current
1.5A
VCEsat-Max
0.4 V
Turn Off Time-Max (toff)
3350ns
Turn On Time-Max (ton)
700ns
Fall Time-Max (tf)
350ns
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
4,000
$0.13875
$0.555
APT13003DU-G1 Product Details
APT13003DU-G1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 5 @ 1A 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 250mA, 1A.Continuous collector voltages should be kept at 1.5A to achieve high efficiency.The base voltage of the emitter can be kept at 9V to achieve high efficiency.4MHz is present in the transition frequency.During maximum operation, collector current can be as low as 1.5A volts.
APT13003DU-G1 Features
the DC current gain for this device is 5 @ 1A 2V a collector emitter saturation voltage of 300mV the vce saturation(Max) is 400mV @ 250mA, 1A the emitter base voltage is kept at 9V a transition frequency of 4MHz
APT13003DU-G1 Applications
There are a lot of Diodes Incorporated APT13003DU-G1 applications of single BJT transistors.