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APT13003DU-G1

APT13003DU-G1

APT13003DU-G1

Diodes Incorporated

APT13003DU-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

APT13003DU-G1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2016
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Max Power Dissipation 20W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 1A 2V
Vce Saturation (Max) @ Ib, Ic 400mV @ 250mA, 1A
Collector Emitter Breakdown Voltage 450V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 300mV
Emitter Base Voltage (VEBO) 9V
Continuous Collector Current 1.5A
VCEsat-Max 0.4 V
Turn Off Time-Max (toff) 3350ns
Turn On Time-Max (ton) 700ns
Fall Time-Max (tf) 350ns
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.13875 $0.555
APT13003DU-G1 Product Details

APT13003DU-G1 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 5 @ 1A 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 250mA, 1A.Continuous collector voltages should be kept at 1.5A to achieve high efficiency.The base voltage of the emitter can be kept at 9V to achieve high efficiency.4MHz is present in the transition frequency.During maximum operation, collector current can be as low as 1.5A volts.

APT13003DU-G1 Features


the DC current gain for this device is 5 @ 1A 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 400mV @ 250mA, 1A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz

APT13003DU-G1 Applications


There are a lot of Diodes Incorporated APT13003DU-G1 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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