FJN965BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJN965BU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
20V
Max Power Dissipation
750mW
Current Rating
5A
Frequency
150MHz
Number of Elements
1
Element Configuration
Single
Power Dissipation
750mW
Gain Bandwidth Product
150MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
230 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 3A
Collector Emitter Breakdown Voltage
20V
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
7V
hFE Min
230
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
FJN965BU Product Details
FJN965BU Overview
DC current gain in this device equals 230 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The maximum collector current is 5A volts.
FJN965BU Features
the DC current gain for this device is 230 @ 500mA 2V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 100mA, 3A the emitter base voltage is kept at 7V the current rating of this device is 5A
FJN965BU Applications
There are a lot of ON Semiconductor FJN965BU applications of single BJT transistors.