MJL3281A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJL3281A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Case Connection
ISOLATED
Power - Max
200W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
75 @ 5A 5V
Current - Collector Cutoff (Max)
50μA ICBO
Vce Saturation (Max) @ Ib, Ic
3V @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max)
260V
Current - Collector (Ic) (Max)
15A
Transition Frequency
30MHz
Frequency - Transition
30MHz
RoHS Status
Non-RoHS Compliant
MJL3281A Product Details
MJL3281A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 5A 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 1A, 10A.As a result, the part has a transition frequency of 30MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MJL3281A Features
the DC current gain for this device is 75 @ 5A 5V the vce saturation(Max) is 3V @ 1A, 10A a transition frequency of 30MHz
MJL3281A Applications
There are a lot of Rochester Electronics, LLC MJL3281A applications of single BJT transistors.