APT13003EZTR-G1 Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 13 @ 500mA 2V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 250mA, 1A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.Single BJT transistor comes in a supplier device package of TO-92.Detection of Collector Emitter Breakdown at 465V maximal voltage is present.Collector current can be as low as 1.5A volts at its maximum.

APT13003EZTR-G1 Features

the DC current gain for this device is 13 @ 500mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 250mA, 1A
the emitter base voltage is kept at 9V
the supplier device package of TO-92

APT13003EZTR-G1 Applications

There are a lot of Diodes Incorporated APT13003EZTR-G1 applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter