APT13003LZTR-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
APT13003LZTR-G1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Supplier Device Package
TO-92
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2017
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
800mW
Element Configuration
Single
Power - Max
800mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
6 @ 300mA 10V
Vce Saturation (Max) @ Ib, Ic
500mV @ 40mA, 200mA
Collector Emitter Breakdown Voltage
450V
Voltage - Collector Emitter Breakdown (Max)
450V
Current - Collector (Ic) (Max)
800mA
Collector Emitter Saturation Voltage
500mV
Emitter Base Voltage (VEBO)
9V
Height
4.7mm
Length
4.7mm
Width
3.7mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.507019
$0.507019
10
$0.478320
$4.7832
100
$0.451245
$45.1245
500
$0.425703
$212.8515
1000
$0.401607
$401.607
APT13003LZTR-G1 Product Details
APT13003LZTR-G1 Overview
In this device, the DC current gain is 6 @ 300mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 40mA, 200mA.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Single BJT transistor comes in a supplier device package of TO-92.There is a 450V maximal voltage in the device due to collector-emitter breakdown.When collector current reaches its maximum, it can reach 800mA volts.
APT13003LZTR-G1 Features
the DC current gain for this device is 6 @ 300mA 10V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 40mA, 200mA the emitter base voltage is kept at 9V the supplier device package of TO-92
APT13003LZTR-G1 Applications
There are a lot of Diodes Incorporated APT13003LZTR-G1 applications of single BJT transistors.