MPSW45AG Overview
This device has a DC current gain of 25000 @ 200mA 5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.When VCE saturation is 1.5V @ 2mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1A for high efficiency.The base voltage of the emitter can be kept at 12V to achieve high efficiency.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.The maximum collector current is 1A volts.
MPSW45AG Features
the DC current gain for this device is 25000 @ 200mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 2mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 100MHz
MPSW45AG Applications
There are a lot of ON Semiconductor MPSW45AG applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting