MPSW45AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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MPSW45AG Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
50V
Max Power Dissipation
1W
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
1A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MPSW45A
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
1W
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
25000 @ 200mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 2mA, 1A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
1.5V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
12V
Continuous Collector Current
1A
Height
7.87mm
Length
5.21mm
Width
4.19mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
MPSW45AG Product Details
MPSW45AG Overview
This device has a DC current gain of 25000 @ 200mA 5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.When VCE saturation is 1.5V @ 2mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1A for high efficiency.The base voltage of the emitter can be kept at 12V to achieve high efficiency.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.The maximum collector current is 1A volts.
MPSW45AG Features
the DC current gain for this device is 25000 @ 200mA 5V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.5V @ 2mA, 1A the emitter base voltage is kept at 12V the current rating of this device is 1A a transition frequency of 100MHz
MPSW45AG Applications
There are a lot of ON Semiconductor MPSW45AG applications of single BJT transistors.