4885-MPSA42 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
4885-MPSA42 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Operating Temperature
-55°C~150°C TJ
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
625mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 30mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
50MHz
RoHS Status
ROHS3 Compliant
4885-MPSA42 Product Details
4885-MPSA42 Overview
This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor shows a 300V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
4885-MPSA42 Features
the DC current gain for this device is 40 @ 30mA 10V the vce saturation(Max) is 500mV @ 2mA, 20mA
4885-MPSA42 Applications
There are a lot of ON Semiconductor 4885-MPSA42 applications of single BJT transistors.