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4885-MPSA42

4885-MPSA42

4885-MPSA42

ON Semiconductor

4885-MPSA42 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

4885-MPSA42 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Operating Temperature-55°C~150°C TJ
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 625mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 50MHz
RoHS StatusROHS3 Compliant
In-Stock:1110 items

4885-MPSA42 Product Details

4885-MPSA42 Overview


This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor shows a 300V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

4885-MPSA42 Features


the DC current gain for this device is 40 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA

4885-MPSA42 Applications


There are a lot of ON Semiconductor 4885-MPSA42 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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