BC847B-13-F Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 450 @ 2mA 5V.With a collector emitter saturation voltage of 200V, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A 200mA continuous collector voltage is necessary to achieve high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.In this part, there is a transition frequency of 300MHz.A breakdown input voltage of 45V volts can be used.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

BC847B-13-F Features

the DC current gain for this device is 450 @ 2mA 5V
a collector emitter saturation voltage of 200V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

BC847B-13-F Applications

There are a lot of Diodes Incorporated BC847B-13-F applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting