2SC4083T106N datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SC4083T106N Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
11V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
50mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SC4083
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
3.2 GHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
11V
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
56 @ 5mA 10V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 10mA
Collector Emitter Breakdown Voltage
11V
Transition Frequency
3200MHz
Max Breakdown Voltage
11V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
3V
hFE Min
56
Continuous Collector Current
50mA
VCEsat-Max
0.5 V
Highest Frequency Band
S B
Collector-Base Capacitance-Max
1.5pF
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.036720
$0.03672
500
$0.027000
$13.5
1000
$0.022500
$22.5
2000
$0.020642
$41.284
5000
$0.019292
$96.46
10000
$0.017946
$179.46
15000
$0.017356
$260.34
50000
$0.017066
$853.3
2SC4083T106N Product Details
2SC4083T106N Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 56 @ 5mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 10mA.Continuous collector voltages of 50mA should be maintained to achieve high efficiency.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 50mA.In this part, there is a transition frequency of 3200MHz.Breakdown input voltage is 11V volts.Maximum collector currents can be below 50mA volts.
2SC4083T106N Features
the DC current gain for this device is 56 @ 5mA 10V the vce saturation(Max) is 500mV @ 5mA, 10mA the emitter base voltage is kept at 3V the current rating of this device is 50mA a transition frequency of 3200MHz
2SC4083T106N Applications
There are a lot of ROHM Semiconductor 2SC4083T106N applications of single BJT transistors.