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2SC4083T106N

2SC4083T106N

2SC4083T106N

ROHM Semiconductor

2SC4083T106N datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SC4083T106N Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 11V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 50mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SC4083
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 3.2 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 11V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 10mA
Collector Emitter Breakdown Voltage 11V
Transition Frequency 3200MHz
Max Breakdown Voltage 11V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
hFE Min 56
Continuous Collector Current 50mA
VCEsat-Max 0.5 V
Highest Frequency Band S B
Collector-Base Capacitance-Max 1.5pF
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.036720 $0.03672
500 $0.027000 $13.5
1000 $0.022500 $22.5
2000 $0.020642 $41.284
5000 $0.019292 $96.46
10000 $0.017946 $179.46
15000 $0.017356 $260.34
50000 $0.017066 $853.3
2SC4083T106N Product Details

2SC4083T106N Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 56 @ 5mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 10mA.Continuous collector voltages of 50mA should be maintained to achieve high efficiency.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 50mA.In this part, there is a transition frequency of 3200MHz.Breakdown input voltage is 11V volts.Maximum collector currents can be below 50mA volts.

2SC4083T106N Features


the DC current gain for this device is 56 @ 5mA 10V
the vce saturation(Max) is 500mV @ 5mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 3200MHz

2SC4083T106N Applications


There are a lot of ROHM Semiconductor 2SC4083T106N applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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