PBSS8110TVL Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 250mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 100mA, 1A.There is a transition frequency of 100MHz in the part.Device displays Collector Emitter Breakdown (100V maximal voltage).

PBSS8110TVL Features

the DC current gain for this device is 150 @ 250mA 1V
the vce saturation(Max) is 200mV @ 100mA, 1A
a transition frequency of 100MHz

PBSS8110TVL Applications

There are a lot of Nexperia USA Inc. PBSS8110TVL applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter