BC857CT-7-F Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.A collector emitter saturation voltage of -650mV ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In this part, there is a transition frequency of 100MHz.There is a breakdown input voltage of 45V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BC857CT-7-F Features

the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC857CT-7-F Applications

There are a lot of Diodes Incorporated BC857CT-7-F applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter