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ZXTN25040DFLTA

ZXTN25040DFLTA

ZXTN25040DFLTA

Diodes Incorporated

ZXTN25040DFLTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTN25040DFLTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation350mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating1.5A
Frequency 190MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTN25040D
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation350mW
Transistor Application SWITCHING
Gain Bandwidth Product190MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 130V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 285mV @ 400mA, 4A
Collector Emitter Breakdown Voltage40V
Transition Frequency 190MHz
Collector Emitter Saturation Voltage85mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 130V
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 1.5A
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:16208 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.509135$0.509135
10$0.480315$4.80315
100$0.453128$45.3128
500$0.427478$213.739
1000$0.403283$403.283

ZXTN25040DFLTA Product Details

ZXTN25040DFLTA Overview


In this device, the DC current gain is 300 @ 10mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 85mV, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 285mV @ 400mA, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at 1.5A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1.5A.As a result, the part has a transition frequency of 190MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.

ZXTN25040DFLTA Features


the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 85mV
the vce saturation(Max) is 285mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is 1.5A
a transition frequency of 190MHz

ZXTN25040DFLTA Applications


There are a lot of Diodes Incorporated ZXTN25040DFLTA applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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