PBSS4032NT,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS4032NT,215 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Max Power Dissipation
1.1W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
180MHz
Base Part Number
PBSS4032N
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.1W
Transistor Application
SWITCHING
Gain Bandwidth Product
180MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
2.6A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 1A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
320mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
180MHz
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.161778
$1.161778
10
$1.096017
$10.96017
100
$1.033978
$103.3978
500
$0.975451
$487.7255
1000
$0.920237
$920.237
PBSS4032NT,215 Product Details
PBSS4032NT,215 Overview
This device has a DC current gain of 300 @ 1A 2V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 320mV @ 300mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.There is a transition frequency of 180MHz in the part.This device can take an input voltage of 30V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 2.6A volts at Single BJT transistors maximum.
PBSS4032NT,215 Features
the DC current gain for this device is 300 @ 1A 2V the vce saturation(Max) is 320mV @ 300mA, 3A the emitter base voltage is kept at 5V a transition frequency of 180MHz
PBSS4032NT,215 Applications
There are a lot of Nexperia USA Inc. PBSS4032NT,215 applications of single BJT transistors.