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PBSS4032NT,215

PBSS4032NT,215

PBSS4032NT,215

Nexperia USA Inc.

PBSS4032NT,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS4032NT,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 1.1W
Terminal Position DUAL
Terminal Form GULL WING
Frequency 180MHz
Base Part Number PBSS4032N
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.1W
Transistor Application SWITCHING
Gain Bandwidth Product 180MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 2.6A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 320mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 180MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.161778 $1.161778
10 $1.096017 $10.96017
100 $1.033978 $103.3978
500 $0.975451 $487.7255
1000 $0.920237 $920.237
PBSS4032NT,215 Product Details

PBSS4032NT,215 Overview


This device has a DC current gain of 300 @ 1A 2V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 320mV @ 300mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.There is a transition frequency of 180MHz in the part.This device can take an input voltage of 30V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 2.6A volts at Single BJT transistors maximum.

PBSS4032NT,215 Features


the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 180MHz

PBSS4032NT,215 Applications


There are a lot of Nexperia USA Inc. PBSS4032NT,215 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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